| 000 -LEADER |
|---|
| fixed length control field |
a |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
|---|
| fixed length control field |
230417b xxu||||| |||| 00| 0 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
|---|
| International Standard Book Number |
9781466500556 |
| 082 ## - DEWEY DECIMAL CLASSIFICATION NUMBER |
|---|
| Classification number |
621.3815284 |
| Item number |
MAI |
| 100 ## - MAIN ENTRY--PERSONAL NAME |
|---|
| Personal name |
Maiti C.K. |
| 245 ## - TITLE STATEMENT |
|---|
| Title |
Strain-engineered MOSFETs |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT) |
|---|
| Name of publisher, distributor, etc |
Taylor and Francis Group, |
| Place of publication, distribution, etc |
2013 |
| Date of publication, distribution, etc |
Boca Raton : |
| 300 ## - PHYSICAL DESCRIPTION |
|---|
| Extent |
xix, 300 p. ; |
| Other physical details |
ill., |
| Dimensions |
24 cm |
| 365 ## - TRADE PRICE |
|---|
| Price amount |
2000.00 |
| Price type code |
INR |
| Unit of pricing |
01 |
| 504 ## - BIBLIOGRAPHY, ETC. NOTE |
|---|
| Bibliography, etc |
includes index |
| 520 ## - SUMMARY, ETC. |
|---|
| Summary, etc |
This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced devices. They present a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization |
| 650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Integrated Circuits Fault Tolerance |
|
|---|
| Topical term or geographic name as entry element |
Transistors Reliability |
|
|---|
| Topical term or geographic name as entry element |
Strain |
|
|---|
| Topical term or geographic name as entry element |
1/F noise |
|
|---|
| Topical term or geographic name as entry element |
Bias temperature instability |
|
|---|
| Topical term or geographic name as entry element |
CMOS technology |
|
|---|
| Topical term or geographic name as entry element |
Compressive stress |
|
|---|
| Topical term or geographic name as entry element |
Electron mobility |
|
|---|
| Topical term or geographic name as entry element |
FinFET |
|
|---|
| Topical term or geographic name as entry element |
Gate length |
|
|---|
| Topical term or geographic name as entry element |
Germanium-silicon system |
|
|---|
| Topical term or geographic name as entry element |
Hole mobility |
|
|---|
| Topical term or geographic name as entry element |
Integrated circuit. |
|
|---|
| Topical term or geographic name as entry element |
MOSFETS |
|
|---|
| Topical term or geographic name as entry element |
F-MOSFETs |
|
|---|
| Topical term or geographic name as entry element |
Shallow trench isolation stress |
|
|---|
| Topical term or geographic name as entry element |
Silicidation |
|
|---|
| Topical term or geographic name as entry element |
TCAD |
|
|---|
| Topical term or geographic name as entry element |
Threshold voltage |
|
|---|
| Topical term or geographic name as entry element |
Trap density |
|
|---|
| Topical term or geographic name as entry element |
Valance band |
| 700 ## - ADDED ENTRY--PERSONAL NAME |
|---|
| Personal name |
Maiti T.K. |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) |
|---|
| Source of classification or shelving scheme |
|
| Item type |
Books |