| 000 -LEADER |
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| fixed length control field |
a |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
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| fixed length control field |
230831b xxu||||| |||| 00| 0 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
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| International Standard Book Number |
9783030400200 |
| 082 ## - DEWEY DECIMAL CLASSIFICATION NUMBER |
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| Classification number |
621.3815 |
| Item number |
TIG |
| 100 ## - MAIN ENTRY--PERSONAL NAME |
|---|
| Personal name |
Tigelaar, Howard |
| 245 ## - TITLE STATEMENT |
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| Title |
How transistor area shrank by 1 million fold |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT) |
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| Name of publisher, distributor, etc |
Springer, |
| Date of publication, distribution, etc |
2020 |
| Place of publication, distribution, etc |
Cham : |
| 300 ## - PHYSICAL DESCRIPTION |
|---|
| Extent |
xxiv, 319 p. ; |
| Other physical details |
ill., (some color), |
| Dimensions |
25 cm |
| 365 ## - TRADE PRICE |
|---|
| Price amount |
44.99 |
| Price type code |
EUR |
| Unit of pricing |
94.90 |
| 504 ## - BIBLIOGRAPHY, ETC. NOTE |
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| Bibliography, etc |
Includes bibliographical references and index. |
| 520 ## - SUMMARY, ETC. |
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| Summary, etc |
This book explains in laymans terms how CMOS transistors work. The author explains step-by-step how CMOS transistors are built, along with an explanation of the purpose of each process step. He describes for readers the key inventions and developments in science and engineering that overcame huge obstacles, enabling engineers to shrink transistor area by over 1 million fold and build billions of transistor switches that switch over a billion times a second, all on a piece of silicon smaller than a thumbnail. Written from a process integration point of view, in language accessible to a wide variety of readers; Provides readers with an understanding of how transistors work, how they are built, and the equipment used to build them; Describes the incredible science and engineering that was developed to keep transistor scaling on a Moores Law trajectory - (transistor area reduced by half every 2 to 3 years); Enables readers to understand the engineering choices and compromises made while scaling transistors ever smaller, with the constraints that they switch ever faster and use less and less power. |
| 650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM |
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| Topical term or geographic name as entry element |
Bipolar transistor |
|
|---|
| Topical term or geographic name as entry element |
Chemical mechanical polish |
|
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| Topical term or geographic name as entry element |
Chemical vapor deposition |
|
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| Topical term or geographic name as entry element |
CMOS inverter |
|
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| Topical term or geographic name as entry element |
Diode capacitors |
|
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| Topical term or geographic name as entry element |
Gate dielectric scaling |
|
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| Topical term or geographic name as entry element |
Lithography |
|
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| Topical term or geographic name as entry element |
Integrated circuit technology revolution |
|
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| Topical term or geographic name as entry element |
NMOS transistor |
|
|---|
| Topical term or geographic name as entry element |
NMOS transistor |
|
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| Topical term or geographic name as entry element |
Photoresist |
|
|---|
| Topical term or geographic name as entry element |
PMOS transistor |
|
|---|
| Topical term or geographic name as entry element |
P-type subsrate |
|
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| Topical term or geographic name as entry element |
Silicon dioxide |
|
|---|
| Topical term or geographic name as entry element |
Sputter deposition |
|
|---|
| Topical term or geographic name as entry element |
Texas Instruments |
|
|---|
| Topical term or geographic name as entry element |
Transistor gate |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) |
|---|
| Source of classification or shelving scheme |
|
| Item type |
Books |