Nanoscale transistors: device Physics, modeling and simulation.
By: Lundstrom, Mark.
Contributor(s): Guo, Jing.
Material type:
BookPublisher: New York: Springer, 2006Description: vi, 217 p.; ill.: 24 cm.ISBN: 0387280022 .Subject(s): Metal oxide semiconductor field-effect transistors -- Mathematical models | Nanostructured materials -- Mathematical models | NanotechnologyDDC classification: 620.5
| Item type | Current location | Call number | Status | Date due | Barcode |
|---|---|---|---|---|---|
| Books | 620.5 LUN (Browse shelf) | Available | 014685 |
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