| 000 | 00556nam a2200169Ia 4500 | ||
|---|---|---|---|
| 008 | 161214s9999 xx 000 0 und d | ||
| 020 |
_a9780470824078 _c(hbk) |
||
| 082 |
_223 _a621.395 _bKER |
||
| 100 | _aKer, Ming-Dou | ||
| 245 | 0 | _aTransient-induced latchup in CMOS integrated circuits | |
| 260 |
_aSingapore: _bWiley, _c2009 |
||
| 300 |
_axiii, 249 p; _bill.: _c26 cm. |
||
| 650 | _aMetal oxide semiconductors, Complementary -- Defects | ||
| 650 | _aMetal oxide semiconductors, Complementary -- Reliability | ||
| 700 | _aHsu, Sheng-Fu | ||
| 942 |
_2ddc _cBK |
||
| 999 |
_c15909 _d15909 |
||