000			a
999			_c30839 _d30839
008			220601b xxu||||| |||| 00| 0 eng d
020			_a9781316649794
082			_a621.395 _bTAU
100			_aTaur, Yuan
245			_aFundamentals of modern VLSI devices
250			_a2nd ed.
260			_bCambridge University Press, _c2022 _aCambridge :
300			_axxiii, 656 p. ; _bill., _c25 cm
365			_b1195.00 _cINR _d01
504			_aIncludes bibliographical references and index.
520			_aThe great advances made in VLSI technology in recent years have been underpinned by rapid developments in the design and fabrication of CMOS and bipolar devices, particularly at the deep submicron level. This book examines in detail the basic properties and design of these devices, including chip integration, and discusses the various factors that affect their performance. The book contains many exercises, and can be used as a textbook for senior undergraduate or first-year graduate courses on microelectronics or VLSI devices. It will also be a valuable reference volume for practicing engineers involved in research and development in the electronics industry.
650			_aMetal oxide semiconductors Complementary
650			_aBipolar transistors
650			_aIntegrated circuits
650			_aComplementary
650			_aBallistic transport
650			_aCoulomb scattering
650			_a Drain-current model
650			_a Drift-diffusion model
650			_aEbers-Moll model
650			_aFermi level
650			_aGummel plot
650			_aHigh-level injection
650			_aJunction capacitance
650			_aKrik effect
650			_a Multiple- gate (MG)MOSFET
650			_a Nonvolatile memory
650			_a Parastic resistance
650			_a Quasi-Fermi level
650			_aSaturation point
650			_aTwo-way NAND
650			_a Velocity-field relationship
650			_aWeb-ster effect
650			_a SRAM
700			_aNing, Tak H.
942			_2ddc _cBK