000			a
999			_c31960 _d31960
008			230417b xxu||||| |||| 00| 0 eng d
020			_a9781466500556
082			_a621.3815284 _bMAI
100			_aMaiti C.K.
245			_aStrain-engineered MOSFETs
260			_bTaylor and Francis Group, _a2013 _cBoca Raton :
300			_axix, 300 p. ; _bill., _c24 cm
365			_b2000.00 _cINR _d01
504			_aincludes index
520			_aThis book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced devices. They present a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization
650			_aIntegrated Circuits Fault Tolerance
650			_aTransistors Reliability
650			_aStrain
650			_a1/F noise
650			_aBias temperature instability
650			_aCMOS technology
650			_aCompressive stress
650			_aElectron mobility
650			_aFinFET
650			_aGate length
650			_aGermanium-silicon system
650			_aHole mobility
650			_aIntegrated circuit.
650			_aMOSFETS
650			_aF-MOSFETs
650			_aShallow trench isolation stress
650			_a Silicidation
650			_aTCAD
650			_aThreshold voltage
650			_aTrap density
650			_aValance band
700			_aMaiti T.K.
942			_2ddc _cBK