000 | a | ||
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999 |
_c32445 _d32445 |
||
008 | 230831b xxu||||| |||| 00| 0 eng d | ||
020 | _a9783030400200 | ||
082 |
_a621.3815 _bTIG |
||
100 | _aTigelaar, Howard | ||
245 | _aHow transistor area shrank by 1 million fold | ||
260 |
_bSpringer, _c2020 _aCham : |
||
300 |
_axxiv, 319 p. ; _bill., (some color), _c25 cm |
||
365 |
_b44.99 _cEUR _d94.90 |
||
504 | _aIncludes bibliographical references and index. | ||
520 | _aThis book explains in laymans terms how CMOS transistors work. The author explains step-by-step how CMOS transistors are built, along with an explanation of the purpose of each process step. He describes for readers the key inventions and developments in science and engineering that overcame huge obstacles, enabling engineers to shrink transistor area by over 1 million fold and build billions of transistor switches that switch over a billion times a second, all on a piece of silicon smaller than a thumbnail. Written from a process integration point of view, in language accessible to a wide variety of readers; Provides readers with an understanding of how transistors work, how they are built, and the equipment used to build them; Describes the incredible science and engineering that was developed to keep transistor scaling on a Moores Law trajectory - (transistor area reduced by half every 2 to 3 years); Enables readers to understand the engineering choices and compromises made while scaling transistors ever smaller, with the constraints that they switch ever faster and use less and less power. | ||
650 | _aBipolar transistor | ||
650 | _aChemical mechanical polish | ||
650 | _aChemical vapor deposition | ||
650 | _aCMOS inverter | ||
650 | _aDiode capacitors | ||
650 | _aGate dielectric scaling | ||
650 | _aLithography | ||
650 | _aIntegrated circuit technology revolution | ||
650 | _aNMOS transistor | ||
650 | _aNMOS transistor | ||
650 | _aPhotoresist | ||
650 | _aPMOS transistor | ||
650 | _a P-type subsrate | ||
650 | _aSilicon dioxide | ||
650 | _aSputter deposition | ||
650 | _aTexas Instruments | ||
650 | _aTransistor gate | ||
942 |
_2ddc _cBK |