000 | 00616nam a2200205Ia 4500 | ||
---|---|---|---|
008 | 161214s9999 xx 000 0 und d | ||
020 |
_a0125440561 _c(pbk) |
||
082 |
_223 _a621.38152 _bPAN |
||
100 | _aPankove, Jacques I. | ||
245 | 0 | _aGallium Nitride (GaN) I | |
260 |
_aSan Diego: _bAcademic Press, _c1998 |
||
300 |
_axv, 517 p.; _b: _c23 cm. |
||
650 | _aElectroluminescent devices - Materials | ||
650 | _aGallium nitride | ||
650 | _aQuantum wells | ||
650 | _aSemiconductors - Materials | ||
650 | _aSemiconductors - Optical properties | ||
700 | _aMoustakas, Theodore D. | ||
942 |
_2ddc _cBK |
||
999 |
_c444 _d444 |