000 | 00575nam a2200169Ia 4500 | ||
---|---|---|---|
008 | 161214s9999 xx 000 0 und d | ||
020 |
_a0195170148 _c(pbk) |
||
082 |
_223 _a621.3815284 _bTSI |
||
100 | _aTsividis, Yannis | ||
245 | 0 | _aOperation and modeling of the MOS transistor | |
250 | _a2nd ed. | ||
260 |
_aNew York: _bOxford University Press, _c2003 |
||
300 |
_axx, 620 p.; _bill.: _c25 cm. |
||
650 | _aMetal oxide semiconductor field-effect transistors -- Mathematical models | ||
650 | _aMetal oxide semiconductors -- Mathematical models | ||
942 |
_2ddc _cBK |
||
999 |
_c958 _d958 |