Item type | Current location | Call number | Status | Date due | Barcode |
---|---|---|---|---|---|
Books | 621.3815284 MAI (Browse shelf) | Available | 033884 |
621.3815284 BAL Silicon RF power MOSFETS | 621.3815284 ENZ Charge-based MOS transistor modeling : the EKV model for low-power and RF IC design | 621.3815284 GAL MOSFET modeling for circuit analysis and design | 621.3815284 MAI Strain-engineered MOSFETs | 621.3815284 PIE Field effect devices, Vol. IV | 621.3815284 TSI Operation and modeling of the MOS transistor | 621.38153 CAT Schaum's outline of theory and problems of electronic devices and circuits |
includes index
This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced devices. They present a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization
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