Fundamentals of modern VLSI devices
- 2nd ed.
- Cambridge : Cambridge University Press, 2022
- xxiii, 656 p. ; ill., 25 cm
Includes bibliographical references and index.
The great advances made in VLSI technology in recent years have been underpinned by rapid developments in the design and fabrication of CMOS and bipolar devices, particularly at the deep submicron level. This book examines in detail the basic properties and design of these devices, including chip integration, and discusses the various factors that affect their performance. The book contains many exercises, and can be used as a textbook for senior undergraduate or first-year graduate courses on microelectronics or VLSI devices. It will also be a valuable reference volume for practicing engineers involved in research and development in the electronics industry.
9781316649794
Metal oxide semiconductors Complementary Bipolar transistors Integrated circuits Complementary Ballistic transport Coulomb scattering Drain-current model Drift-diffusion model Ebers-Moll model Fermi level Gummel plot High-level injection Junction capacitance Krik effect Multiple- gate (MG)MOSFET Nonvolatile memory Parastic resistance Quasi-Fermi level Saturation point Two-way NAND Velocity-field relationship Web-ster effect SRAM