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Fundamentals of modern VLSI devices

By: Taur, Yuan.
Contributor(s): Ning, Tak H.
Publisher: Cambridge : Cambridge University Press, 2022Edition: 2nd ed.Description: xxiii, 656 p. ; ill., 25 cm.ISBN: 9781316649794.Subject(s): Metal oxide semiconductors Complementary | Bipolar transistors | Integrated circuits | Complementary | Ballistic transport | Coulomb scattering | Drain-current model | Drift-diffusion model | Ebers-Moll model | Fermi level | Gummel plot | High-level injection | Junction capacitance | Krik effect | Multiple- gate (MG)MOSFET | Nonvolatile memory | Parastic resistance | Quasi-Fermi level | Saturation point | Two-way NAND | Velocity-field relationship | Web-ster effect | SRAMDDC classification: 621.395 Summary: The great advances made in VLSI technology in recent years have been underpinned by rapid developments in the design and fabrication of CMOS and bipolar devices, particularly at the deep submicron level. This book examines in detail the basic properties and design of these devices, including chip integration, and discusses the various factors that affect their performance. The book contains many exercises, and can be used as a textbook for senior undergraduate or first-year graduate courses on microelectronics or VLSI devices. It will also be a valuable reference volume for practicing engineers involved in research and development in the electronics industry.
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Includes bibliographical references and index.

The great advances made in VLSI technology in recent years have been underpinned by rapid developments in the design and fabrication of CMOS and bipolar devices, particularly at the deep submicron level. This book examines in detail the basic properties and design of these devices, including chip integration, and discusses the various factors that affect their performance. The book contains many exercises, and can be used as a textbook for senior undergraduate or first-year graduate courses on microelectronics or VLSI devices. It will also be a valuable reference volume for practicing engineers involved in research and development in the electronics industry.

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