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| fixed length control field |
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| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
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| fixed length control field |
220601b xxu||||| |||| 00| 0 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
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| International Standard Book Number |
9781316649794 |
| 082 ## - DEWEY DECIMAL CLASSIFICATION NUMBER |
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| Classification number |
621.395 |
| Item number |
TAU |
| 100 ## - MAIN ENTRY--PERSONAL NAME |
|---|
| Personal name |
Taur, Yuan |
| 245 ## - TITLE STATEMENT |
|---|
| Title |
Fundamentals of modern VLSI devices |
| 250 ## - EDITION STATEMENT |
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| Edition statement |
2nd ed. |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT) |
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| Name of publisher, distributor, etc |
Cambridge University Press, |
| Date of publication, distribution, etc |
2022 |
| Place of publication, distribution, etc |
Cambridge : |
| 300 ## - PHYSICAL DESCRIPTION |
|---|
| Extent |
xxiii, 656 p. ; |
| Other physical details |
ill., |
| Dimensions |
25 cm |
| 365 ## - TRADE PRICE |
|---|
| Price amount |
1195.00 |
| Price type code |
INR |
| Unit of pricing |
01 |
| 504 ## - BIBLIOGRAPHY, ETC. NOTE |
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| Bibliography, etc |
Includes bibliographical references and index. |
| 520 ## - SUMMARY, ETC. |
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| Summary, etc |
The great advances made in VLSI technology in recent years have been underpinned by rapid developments in the design and fabrication of CMOS and bipolar devices, particularly at the deep submicron level. This book examines in detail the basic properties and design of these devices, including chip integration, and discusses the various factors that affect their performance. The book contains many exercises, and can be used as a textbook for senior undergraduate or first-year graduate courses on microelectronics or VLSI devices. It will also be a valuable reference volume for practicing engineers involved in research and development in the electronics industry. |
| 650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM |
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| Topical term or geographic name as entry element |
Metal oxide semiconductors Complementary |
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| Topical term or geographic name as entry element |
Bipolar transistors |
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| Topical term or geographic name as entry element |
Integrated circuits |
|
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| Topical term or geographic name as entry element |
Complementary |
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| Topical term or geographic name as entry element |
Ballistic transport |
|
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| Topical term or geographic name as entry element |
Coulomb scattering |
|
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| Topical term or geographic name as entry element |
Drain-current model |
|
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| Topical term or geographic name as entry element |
Drift-diffusion model |
|
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| Topical term or geographic name as entry element |
Ebers-Moll model |
|
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| Topical term or geographic name as entry element |
Fermi level |
|
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| Topical term or geographic name as entry element |
Gummel plot |
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| Topical term or geographic name as entry element |
High-level injection |
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| Topical term or geographic name as entry element |
Junction capacitance |
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| Topical term or geographic name as entry element |
Krik effect |
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| Topical term or geographic name as entry element |
Multiple- gate (MG)MOSFET |
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| Topical term or geographic name as entry element |
Nonvolatile memory |
|
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| Topical term or geographic name as entry element |
Parastic resistance |
|
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| Topical term or geographic name as entry element |
Quasi-Fermi level |
|
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| Topical term or geographic name as entry element |
Saturation point |
|
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| Topical term or geographic name as entry element |
Two-way NAND |
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| Topical term or geographic name as entry element |
Velocity-field relationship |
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| Topical term or geographic name as entry element |
Web-ster effect |
|
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| Topical term or geographic name as entry element |
SRAM |
| 700 ## - ADDED ENTRY--PERSONAL NAME |
|---|
| Personal name |
Ning, Tak H. |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) |
|---|
| Source of classification or shelving scheme |
|
| Item type |
Books |